Faculty Members

Dr. DeepalI Jagga

Assistant Professor

faculty-large-icon

Bio

Dr. Deepali Jagga is a semiconductor researcher with expertise in emerging memory devices such as MRAM, RRAM, and ferroelectric tunnel junctions. She earned her Ph.D. from National Yang Ming Chiao Tung University, Taiwan, where she focused on device fabrication, modeling, and spintronic materials.

Her research experience includes industrial-scale MRAM process optimization at TSRI, Taiwan, and She has published in leading journals and actively works on bridging academic research with semiconductor industry applications.

+

Education

  • Ph.D. from National Yang Ming Chiao Tung University, Taiwan (2020–2024)
  • M.Sc. Physics from Sant Longowal Institute of Engineering & Technology (2016–2018)
  • B.Sc. from Kalindi College, Delhi University (2013–2016)

Experience

  • Assistant Professor, Sant Longowal Institute of Engineering & Technology (July 2024 – June 2025)

Conferences

  • Deepali Jagga, & Artur Useinov. (2023, April). “Thomas-Fermi interfacial screening with voltage-dependence of the screening lengths and influence of oxygen vacancies in MFTJs.” In 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) (pp. 1–2). IEEE. DOI: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134310. Quartile: A*
  • Deepali Jagga, Vitaly I. Korepanov, Daria M. Sedlovets, & Artur Useinov. (2023). “Spin-induced metal–insulator transition and magnetic hysteresis in metal-based polyphthalocyanines.” Materials Today: Proceedings. DOI: 10.1016/j.matpr.2023.03.131. Quartile: B
  • Deepali Jagga, & Artur Useinov. (2023, August). “WKB Approach for Ferroelectric Tunnel Junctions with Thomas-Fermi Voltage Dependent Screening and Electrostriction Effect.” In 2023 3rd Asian Conference on Innovation in Technology (ASIANCON) (pp. 1–6). IEEE. DOI: 10.1109/ASIANCON58793.2023.10270560. Quartile: A
  • Deepali Jagga, Sourav De, & Artur Useinov. (2024, March). “WKB model of ferroelectric tunnel junctions for memory applications: voltage-dependent screening and electrostriction effects.” In 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1–3). IEEE. DOI: 10.1109/EDTM58488.2024.10512202. Quartile: A

Publications

  • Deepali Jagga, & Artur Useinov. (2023). “Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers.” Journal of Applied Physics, 134(12), 2023. DOI: 10.1063/5.0166078, Impact Factor: 2.77, Quartile: Q2
  • Deepali Jagga, Vitaly I. Korepanov, Daria M. Sedlovets, & Artur Useinov. (2022). “Spin-Induced Switching of Electronic State Populations in Transition Metal Polyphthalocyanines.” Materials, 15(22), 8098. DOI: 10.3390/ma15228098, Impact Factor: 3.748, Quartile: Q2
  • Artur Useinov, Deepali Jagga, & Edward Yang Chang. (2022). “Tunnel electroresistance in Hf0.5Zr0.5O2-based ferroelectric tunnel junctions under hysteresis: approach of the point contact model and the linearized Thomas–Fermi screening.” ACS Applied Electronic Materials, 4(5), 2238–2245. DOI: 10.1021/acsaelm.2c00022, Impact Factor: 5.07, Quartile: Q1
  • Deepali Jagga, Artur Useinov, Vitaly I. Korepanov, & Daria M. Sedlovets. (2023). “Magnetic anomalies in polyphthalocyanines with Fe-, Ni- and Co-magnetic centers.” Physica E: Low-Dimensional Systems and Nanostructures, 154, 115795. DOI: 10.1016/j.physe.2023.115795, Impact Factor: 3.27, Quartile: Q2
  • Do, H. B. C., Chung, C. H., Mai, T. T., Prasad, O. K., & Deepali Jagga. (2024). “Investigation of Resistive Switching of Insulating Hafnium Nitride for Nonvolatile Memory Applications.” ECS Journal of Solid-State Science and Technology, 13(2), 025005. DOI: 10.1149/2162-8777/ad2aed, Impact Factor: 2.10, Quartile: Q3
  • Deepali Jagga, Vitaly I. Korepanov, Daria M. Sedlovets, & Artur Useinov. (2023). “Spin-induced metal–insulator transition and magnetic hysteresis in metal-based polyphthalocyanines.” Materials Today: Proceedings. DOI: 10.1016/j.matpr.2023.03.131, Quartile: Q2

Projects / Achievements

  • Certificate of Merit: Gold Medalist in M.Sc. Physics (2016–2018) from Sant Longowal Institute of Engineering and Technology, Punjab.
  • Best Poster Award by Industrial Technology Research Institute at the International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), held in April 2023 in Taiwan.
  • Outstanding Teaching Assistant Award at National Yang Ming Chiao Tung University (NYCU), Taiwan (2022–2023).
  • Silver Jubilee Scholarship Award for Best Student of the 2013–2016 batch during B.Sc. Physics (Hons.) from Kalindi College, Delhi University.
ADMISSIONS
Online Registration

Campus
Nirwan University Jaipur

Near Bassi-Rajadhok Toll, Agra Road, Jaipur- 303305
mobile_icon+91 - 9289800300

City Office

21, Sahkar Marg, 1st Floor, Near 22 Godam Circle
Jaipur - 302019 Rajasthan
mobile_icon0141 - 2228000
Back To Home
Campus

Nirwan University

Near Bassi-Rajadhok Toll, Village- Jhar, Agra Road, Jaipur - 303305 Rajasthan
Back To Home
Icon-whatsapp-fill